STL11N6F7
MOSFET N-CH 60V 11A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL11N6F7 is an N-channel STripFET™ Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 11A at 25°C ambient temperature. The low on-resistance of 12mOhm is achieved at 5.5A drain current and 10V gate-source voltage (Vgs), facilitated by a 10V drive voltage. Key parameters include a gate charge (Qg) of 17nC maximum and input capacitance (Ciss) of 1035pF maximum. The STL11N6F7 has a maximum power dissipation of 2.9W (Ta) or 48W (Tc) and operates within a junction temperature range of -55°C to 150°C. It is supplied in an 8-PowerVDFN package with a PowerFlat™ (3.3x3.3) footprint, suitable for surface mounting. This component finds application in power supply, industrial, and automotive sectors.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 30 V |
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