STL11N65M2
MOSFET N-CH 650V POWERFLAT 5X5 HManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STL11N65M2 is a 650V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current capability of 7A at 25°C (Tc) and a maximum power dissipation of 85W (Tc). The Rds(on) is specified at a maximum of 670mOhm at 3.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 12.4 nC (max) at 10V Vgs and an input capacitance (Ciss) of 410 pF (max) at 100V Vds. The STL11N65M2 operates across a temperature range of -55°C to 150°C (TA) and is supplied in a Tape & Reel (TR) package for surface mounting. This component finds application in industries such as server power supplies, industrial power control, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 670mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 100 V |
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