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STL11N4LLF5

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STL11N4LLF5

MOSFET N-CH 40V 11A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL11N4LLF5 is an N-channel STripFET™ V Power MOSFET featuring a 40V drain-source voltage and 11A continuous drain current at 25°C. This device offers a low on-resistance of 9.7mOhm maximum at 5.5A and 10V Vgs. The STL11N4LLF5 is housed in an 8-PowerVDFN, 3.3x3.3 PowerFlat™ package suitable for surface mounting. Key electrical parameters include a gate charge of 12.9 nC maximum at 4.5V Vgs and an input capacitance of 1570 pF maximum at 25V Vds. Maximum power dissipation is rated at 2.9W (Ta) and 50W (Tc). This component is designed for applications requiring efficient power switching and is commonly found in automotive, industrial, and consumer electronics sectors. The operating temperature range is -55°C to 150°C.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs9.7mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs12.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 25 V

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