STL11N3LLH6
MOSFET N-CH 30V 11A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL11N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Tc). The optimized PowerFlat™ package (3.3x3.3mm) offers low thermal resistance, enabling 50W of power dissipation at 25°C (Tc) and 2W at 25°C (Ta). With a low on-resistance of 7.5mOhm maximum at 5.5A and 10V, and a gate charge of 17nC maximum at 4.5V, this MOSFET is designed for efficient power switching applications. Typical industries utilizing this component include automotive and industrial power management. It operates across a temperature range of -55°C to 150°C and is supplied in Tape & Reel packaging.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | PowerFlat™ (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 24 V |
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