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STL117N4LF7AG

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STL117N4LF7AG

MOSFET N-CH 40V 119A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ F7 series STL117N4LF7AG is a 40V N-Channel Power MOSFET designed for high-efficiency power switching applications. This automotive-grade component features a continuous drain current capability of 119A (Tc) and a maximum power dissipation of 94W (Tc). With a low on-resistance of 3.5mOhm at 13A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and exhibits a gate charge of 27.6 nC (max) at 10V. Input capacitance (Ciss) is 1780 pF (max) at 25V. The STL117N4LF7AG is housed in an 8-PowerVDFN (PowerFlat™ 5x6) package, suitable for surface mounting. Its operating temperature range is -55°C to 175°C (TJ), and it is qualified to AEC-Q101 standards. Applications include automotive power management systems and industrial motor control.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C119A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)94W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs27.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1780 pF @ 25 V
QualificationAEC-Q101

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