STL115N10F7AG
MOSFET N-CH 100V 107A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ F7 series STL115N10F7AG is an N-Channel Power MOSFET designed for high-performance applications. This device features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 107A at 25°C (Tc). With a maximum on-resistance (Rds On) of 6 mOhm at 53A and 10V, it offers efficient power handling with a maximum power dissipation of 136W (Tc). The STL115N10F7AG utilizes a wettable flank PowerFlat™ (5x6) package, supporting surface mounting with a PowerVDFN 8-PowerVDFN case. Key electrical characteristics include a gate charge (Qg) of 72.5 nC (max) at 10V and input capacitance (Ciss) of 5600 pF (max) at 50V. Engineered for demanding environments, this component is qualified to AEC-Q101 and operates across a wide temperature range of -55°C to 175°C (TJ). Its robust design makes it suitable for automotive, industrial, and power management systems.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 107A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 50 V |
| Qualification | AEC-Q101 |
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