STL110N4F7AG
MOSFET N-CH 40V 108A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics presents the STL110N4F7AG, an N-Channel STripFET™ F7 Power MOSFET. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 108A at 25°C (Tc), with a maximum power dissipation (Pd) of 94W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 4mOhm at 54A and 10V, and a gate charge (Qg) of 15 nC at 10V. The device utilizes a PowerFlat™ (5x6) surface mount package, specifically the 8-PowerVDFN case. Designed for demanding applications, it operates within a temperature range of -55°C to 175°C (TJ) and is AEC-Q101 qualified, making it suitable for automotive and industrial segments.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 108A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 54A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
| Qualification | AEC-Q101 |
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