STL110N10F7
MOSFET N-CH 100V 107A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL110N10F7 is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 100V. This component from the DeepGATE™, STripFET™ VII series features a low on-resistance of 6mOhm at 10A and 10V, with a continuous drain current (Id) rating of 107A at 25°C (Tc). The device offers a maximum power dissipation of 136W (Tc) and a gate charge (Qg) of 72nC at 10V. Its high switching efficiency is further supported by an input capacitance (Ciss) of 5117pF at 50V. The STL110N10F7 is packaged in an 8-PowerVDFN (PowerFlat™ 5x6) format suitable for surface mounting and is supplied on tape and reel. This MOSFET is commonly utilized in power supply, automotive, and industrial applications requiring robust power switching capabilities.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 107A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5117 pF @ 50 V |
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