STL10N60M2
MOSFET N-CH 600V 5.5A PWRFLAT56Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ II Plus series N-Channel Power MOSFET, part number STL10N60M2. This 600 V device features a continuous drain current of 5.5 A (Tc) and a maximum power dissipation of 48 W (Tc). The STL10N60M2 utilizes a Metal Oxide technology with an Rds On (Max) of 660 mOhm at 2.5 A, 10 V, and a gate charge (Qg) of 13.5 nC @ 10 V. It is housed in an 8-PowerVDFN package, specifically the STMicroelectronics PowerFlat™ (5x6) HV surface mount configuration, supplied on tape and reel. The operating junction temperature range is up to 150°C. This component is suitable for applications in high-voltage power conversion, industrial power supplies, and lighting systems.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 100 V |
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