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STL10N3LLH5

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STL10N3LLH5

MOSFET N-CH 30V 9A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL10N3LLH5 is an N-Channel STripFET™ V series Power MOSFET. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 19mOhm at 4.5A and 10V Vgs, it is designed for efficient power switching applications. The MOSFET offers a low Gate Charge (Qg) of 6nC at 4.5V Vgs and an Input Capacitance (Ciss) of 900pF at 25V Vds. Available in the compact 8-PowerVDFN (3.3x3.3) PowerFlat™ package, it supports surface mounting and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 2W (Ta) and 50W (Tc). This component is suitable for use in automotive and industrial power management systems.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±22V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V

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