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STL105N8F7AG

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STL105N8F7AG

AUTOMOTIVE N-CHANNEL 80 V, 5.6 M

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL105N8F7AG is an N-Channel Power MOSFET designed for automotive applications. This device features a 80V drain-to-source breakdown voltage and a maximum continuous drain current rating of 95A at 25°C (Tc). The low on-resistance of 6.5mOhm is achieved at 25A and 10V gate drive. The STL105N8F7AG offers a maximum power dissipation of 127W at 25°C (Tc) and is qualified to AEC-Q101 standards. It is supplied in an 8-PowerVDFN package (PowerFlat™ 5x6) for surface mounting and is delivered on tape and reel. Key parameters include a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 3475 pF at 25V. This MOSFET is suitable for use in automotive power systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)127W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3475 pF @ 25 V
QualificationAEC-Q101

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