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STL105N4LF7AG

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STL105N4LF7AG

MOSFET N-CH 40V 105A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STripFET™ F7 series STL105N4LF7AG is an N-channel MOSFET designed for high-efficiency power management. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 105A at 25°C (Tc), with a maximum power dissipation of 94W (Tc). The low on-resistance of 4.5mOhm maximum at 11.5A and 10V gate-source voltage, achieved with a 10V gate drive, minimizes conduction losses. Key parameters include a gate charge (Qg) of 23.3 nC max at 10V and input capacitance (Ciss) of 1500 pF max at 25V. It is housed in an 8-PowerVDFN (PowerFlat™ 5x6) package, suitable for surface mounting. The STL105N4LF7AG is AEC-Q101 qualified and rated for automotive applications, operating within a junction temperature range of -55°C to 175°C.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C105A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)94W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs23.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 25 V
QualificationAEC-Q101

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