STL100N8F7
MOSFET N-CH 80V 100A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL100N8F7 is an N-Channel STripFET™ Power MOSFET designed for high-efficiency power conversion. This device features an 80V Drain-Source Voltage (Vdss) and a continuous drain current capability of 100A at 25°C (Tc). Its low on-resistance of 6.1mOhm (max) at 10A and 10V gate drive voltage minimizes conduction losses. The MOSFET offers a gate charge of 46.8 nC (max) and an input capacitance of 3435 pF (max) at 40V, facilitating fast switching performance. With a maximum power dissipation of 120W at 25°C (Tc), it is suitable for demanding applications. The STL100N8F7 is housed in an 8-PowerVDFN package, utilizing STMicroelectronics' PowerFlat™ (5x6) technology for efficient thermal management. This component is commonly found in automotive, industrial power supplies, and server applications. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3435 pF @ 40 V |
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