STL100N6LF6
MOSFET N CH 60V 100A PWRFLAT 5X6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL100N6LF6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). Optimized for high-density power applications, it offers a low on-resistance of 4.5mOhm maximum at 11A and 10V Vgs. The STL100N6LF6 is housed in an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) footprint, suitable for surface mounting. Key electrical parameters include a maximum gate charge of 130nC at 10V Vgs and an input capacitance (Ciss) of 8900pF maximum at 25V Vds. With a maximum power dissipation of 4.8W (Tc) and an extended operating temperature range of -55°C to 175°C (TJ), this component is well-suited for demanding automotive and industrial applications where efficient power switching is critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 25 V |
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