STL100N1VH5
MOSFET N-CH 12V 100A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL100N1VH5, an N-Channel STripFET™ V Power MOSFET, offers a 12V drain-source voltage (Vds) and a continuous drain current (Id) of 100A at 25°C (Tc). This device features a low on-resistance (Rds On) of 3mOhm at 12.5A and 4.5V, facilitated by a 4.5V gate drive. The STL100N1VH5 boasts a maximum power dissipation of 60W (Tc) and a gate charge (Qg) of 26.5 nC at 4.5V. Its input capacitance (Ciss) is rated at 2085 pF maximum at 10V. The component is housed in an 8-PowerVDFN package, identified as PowerFlat™ (5x6), and is supplied on tape and reel. This MOSFET is suitable for high-power switching applications across various industries, including automotive and industrial power management. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 12.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 500mV @ 250µA (Min) |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2085 pF @ 10 V |
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