STL100N10F7
MOSFET N-CH 100V 80A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STL100N10F7 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device features a Drain-Source Voltage (Vds) of 100V and a continuous Drain Current (Id) of 80A at 25°C (Tc). Key performance parameters include a maximum Rds(on) of 7.3mOhm at 19A and 10V, with a typical Gate Charge (Qg) of 80nC at 10V. The input capacitance (Ciss) is rated at a maximum of 5680pF at 50V. It offers excellent power handling capabilities with a maximum power dissipation of 100W at 25°C (Tc) and 5W at 25°C (Ta). The component is housed in an 8-PowerVDFN, Surface Mount, PowerFlat™ (5x6) package and is supplied on Tape & Reel. This MOSFET is suitable for applications in automotive, industrial, and power supply sectors.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5680 pF @ 50 V |
Request a Quote
Clients Also Buy
STD100N10F7
MOSFET N CH 100V 80A DPAK
STD25N10F7
MOSFET N-CH 100V 25A DPAK
STL7N10F7
MOSFET N-CH 100V POWERFLAT
