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STK850

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STK850

MOSFET N-CH 30V 30A POLARPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STK850 is an N-Channel STripFET™ MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc). The low on-resistance (Rds On) of 2.9mOhm at 15A and 10V (Vgs) minimizes conduction losses. With a gate charge (Qg) of 32.5 nC at 4.5V (Vgs) and input capacitance (Ciss) of 3150 pF at 25V (Vds), it offers excellent switching performance. The STK850 is housed in a surface mount PolarPak® package, providing robust thermal management with a maximum power dissipation of 5.2W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive, industrial, and computing power supply designs.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePolarPak®
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs2.9mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePolarPak®
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs32.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3150 pF @ 25 V

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