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STK822

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STK822

MOSFET N-CH 25V 38A POLARPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STK822 is a STripFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 25V drain-source breakdown voltage and a continuous drain current capability of 38A at 25°C ambient temperature, with a maximum power dissipation of 5.2W. The STK822 offers a low on-resistance of 2.15mOhm at 19A and 10V Vgs. It is housed in a thermally enhanced PolarPak® package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 33 nC at 4.5V Vgs and an input capacitance (Ciss) of 6060 pF at 25V Vds. The device operates across a temperature range of -55°C to 150°C. This MOSFET is commonly employed in automotive, industrial, and consumer electronics power management systems.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePolarPak®
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Ta)
Rds On (Max) @ Id, Vgs2.15mOhm @ 19A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePolarPak®
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6060 pF @ 25 V

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