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STK38N3LLH5

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STK38N3LLH5

MOSFET N-CH 30V 38A POLARPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STK38N3LLH5 is an N-Channel MOSFET from the STripFET™ V series, featuring a 30V drain-source breakdown voltage and a continuous drain current capability of 38A at 25°C (Tc). This device boasts a low on-resistance of 1.55mOhm at 19A and 10V Vgs, with a gate charge of 41.7 nC at 4.5V. Designed for efficient power management, it offers a maximum power dissipation of 5.2W (Tc) and operates within a temperature range of -55°C to 150°C. The component utilizes advanced MOSFET technology and is housed in a surface-mount PolarPak® package, supplied on tape and reel. Key parameters include an input capacitance (Ciss) of 4640 pF at 25V and a threshold voltage (Vgs(th)) of 2.5V at 250µA. This MOSFET is suitable for applications in automotive and industrial power systems.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePolarPak®
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs1.55mOhm @ 19A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePolarPak®
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±22V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs41.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4640 pF @ 25 V

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