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STK224N4F7AG

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STK224N4F7AG

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Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ F7 N-Channel MOSFET, part number STK224N4F7AG, is a surface-mount power transistor designed for demanding applications. This component features a 40V Drain-Source Voltage (Vdss) and a continuous drain current capability of 100A (Tc) at 25°C, with a maximum power dissipation of 150W (Tc). The STK224N4F7AG offers a low on-resistance of 1.5mOhm at 50A and 10V, facilitated by its N-Channel MOSFET technology. Key parameters include a Gate Charge (Qg) of 50 nC at 10V and Input Capacitance (Ciss) of 4060 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is qualified to AEC-Q101, making it suitable for automotive applications. It is supplied in the LFPAK56, Power-SO8 package.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSC-100, SOT-669
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs1.5mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageLFPAK56, Power-SO8
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4060 pF @ 25 V
QualificationAEC-Q101

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