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STK20N75F3

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STK20N75F3

MOSFET N-CH 75V 20A POLARPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ N-Channel MOSFET, part number STK20N75F3, offers a 75V drain-source voltage and 20A continuous drain current at 25°C (Tc). This device features a low on-resistance of 7mOhm at 10A and 10V, with a gate-source voltage of 10V. The STK20N75F3 has a maximum power dissipation of 5.2W (Tc) and a gate charge of 53nC at 10V. Its input capacitance (Ciss) is 3150pF at 25V. Packaged in a PolarPak® surface mount configuration, this MOSFET is suitable for applications requiring efficient power switching. It operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±20V. The STK20N75F3 is available on tape and reel (TR). This component finds utility in various power electronics applications across industrial and automotive sectors.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePolarPak®
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePolarPak®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3150 pF @ 25 V

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