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STK184N4F7AG

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STK184N4F7AG

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Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STK184N4F7AG is an N-Channel MOSFET from the STripFET™ F7 series, designed for automotive applications and qualified to AEC-Q101 standards. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 100A at 25°C. It offers a low on-resistance (Rds On) of 2mOhm at 50A and 10V drive voltage. The device is packaged in the LFPAK56, Power-SO8 (SC-100, SOT-669) surface mount configuration, supporting a maximum power dissipation of 136W (Tc). Key electrical parameters include a gate charge (Qg) of 35 nC (max) at 10 V and an input capacitance (Ciss) of 2750 pF (max) at 25 V. The operating junction temperature range is -55°C to 175°C. This MOSFET is suitable for demanding power management applications in automotive systems.

Additional Information

Series: Automotive, AEC-Q101, STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSC-100, SOT-669
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)136W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageLFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2750 pF @ 25 V

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