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STK130N4LF7AG

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STK130N4LF7AG

AUTOMOTIVE-GRADE N-CHANNEL 40 V,

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STK130N4LF7AG is an automotive-grade, N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). The STMicroelectronics STK130N4LF7AG offers a low on-resistance (Rds On) of 3mOhm maximum at 50A and 10V Vgs. It is packaged in an LFPAK56, Power-SO8 (SC-100, SOT-669) surface mount configuration, suitable for high-density board designs. With a maximum power dissipation of 105W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is qualified to AEC-Q101 standards. Key electrical parameters include a gate charge (Qg) of 26 nC maximum at 10V Vgs and input capacitance (Ciss) of 1850 pF maximum at 25V Vds. This device is commonly utilized in automotive power management systems and high-power switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-100, SOT-669
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)105W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageLFPAK56, Power-SO8
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1850 pF @ 25 V
QualificationAEC-Q101

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