STI90N4F3
MOSFET N-CH 40V 80A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI90N4F3 is an N-Channel Power MOSFET from the STripFET™ III series. This component features a Drain-Source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 80A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 6.5mOhm maximum at 40A and 10V gate drive. With a maximum power dissipation of 110W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 54 nC maximum at 10V and an input capacitance (Ciss) of 2200 pF maximum at 25V. The STI90N4F3 is housed in an I2PAK package with through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in power switching, motor control, and automotive applications.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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