STI8N65M5
MOSFET N-CH 650V 7A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI8N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series, designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 650V and a continuous Drain Current (Id) of 7A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 600mOhm at 3.5A and 10V Vgs. With a total power dissipation of 70W (Tc), it is housed in an I2PAK package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 690 pF at 100V Vds. The STI8N65M5 is utilized in power supply, lighting, and industrial applications.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 100 V |