STI6N95K5
NCHANNEL 950V ZENER POWER MOSFETManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics MDmesh™ K5 series STI6N95K5 is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 950V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc), with a maximum power dissipation of 90W (Tc). The STI6N95K5 offers a low on-resistance (Rds On) of 1.25 Ohm at 3A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 450 pF at 100V. Packaged in a TO-262-3 (I2PAK) configuration, it operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for power factor correction, switch-mode power supplies, and high-voltage conversion circuits across industrial and consumer electronics sectors.
Additional Information
Series: MDmesh™ K5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 100 V |
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