STI6N80K5
MOSFET N-CH 800V 4.5A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STI6N80K5 is an N-Channel SuperMESH5™ MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous Drain current (Id) of 4.5A at 25°C (Tc), with a maximum power dissipation of 85W (Tc). The Rds On is specified at a maximum of 1.6 Ohm at 2A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 7.5 nC at 10V and Input Capacitance (Ciss) of 255 pF at 100V. The STI6N80K5 is housed in a TO-262 (I2PAK) package suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C. This device is utilized in power supply units, lighting, and industrial applications requiring robust switching performance.
Additional Information
Series: SuperMESH5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 255 pF @ 100 V |
Request a Quote
Clients Also Buy
STF21N90K5
MOSFET N-CH 900V 18.5A TO220FP
STF13N80K5
MOSFET N-CH 800V 12A TO220FP
STD2N80K5
MOSFET N-CH 800V 2A DPAK
