STI6N62K3
MOSFET N-CH 620V 5.5A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics SuperMESH3™ STI6N62K3 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a 620 V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.5 A at 25°C (Tc), with a maximum power dissipation of 90 W (Tc). The on-resistance (Rds On) is specified at 1.2 Ohm maximum at 2.8 A and 10 V gate-source voltage. Key characteristics include a gate charge (Qg) of 34 nC maximum at 10 V and input capacitance (Ciss) of 875 pF maximum at 50 V. The STI6N62K3 is housed in an I2PAK (TO-262-3 Long Leads) through-hole package, suitable for applications across industrial power supplies, lighting, and motor control. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 50 V |