STI5N52U
MOSFET N-CH 525V 4.4A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI5N52U is an N-Channel MOSFET from the UltraFASTmesh™ series, featuring a 525V drain-source voltage (Vdss) and a continuous drain current of 4.4A at 25°C (Tc). This component offers a maximum on-resistance (Rds On) of 1.5 Ohm at 2.2A and 10V Vgs. With a maximum power dissipation of 70W (Tc) and a Tj operating range of -55°C to 150°C, it is designed for robust performance. Key characteristics include a gate charge (Qg) of 16.9 nC at 10V and input capacitance (Ciss) of 529 pF at 25V. The STI5N52U is available in an I2PAK through-hole package (TO-262-3 Long Leads, I2PAK, TO-262AA) and is suitable for applications in power supply, industrial automation, and electric vehicle power control.
Additional Information
Series: UltraFASTmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 529 pF @ 25 V |