STI57N65M5
MOSFET N-CH 650V 42A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI57N65M5 is an N-channel MOSFET from the MDmesh™ V series. This device features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) capability of 42 A at 25°C (Tc), with a maximum power dissipation of 250 W (Tc). The STI57N65M5 offers a low on-resistance (Rds On) of 63 mOhm at 21 A and 10 V (Vgs). Key parameters include a gate charge (Qg) of 98 nC at 10 V and input capacitance (Ciss) of 4200 pF at 100 V (Vds). The MOSFET is housed in a TO-262 (I2PAK) package suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This component is utilized in applications such as power factor correction, switch mode power supplies, and industrial motor control.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 100 V |
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