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STI55NF03L

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STI55NF03L

MOSFET N-CH 30V 55A I2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STI55NF03L is an STripFET™ II series N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 55A at 25°C (Tc), with a maximum power dissipation of 80W (Tc). The low on-resistance (Rds On) of 13mOhm is achieved at 27.5A and 10V Vgs, with a typical gate charge of 27nC at 4.5V Vgs. The STI55NF03L supports a gate-source voltage range of ±16V and has a threshold voltage (Vgs(th)) of 2.5V at 250µA. This component is housed in an I2PAK package suitable for through-hole mounting and operates across a wide temperature range of -60°C to 175°C (TJ). It finds application in automotive, industrial power supply, and motor control systems.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-60°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 27.5A, 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageI2PAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1265 pF @ 25 V

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