STI45N10F7
MOSFET N-CH 100V 45A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI45N10F7 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 45A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 18mOhm maximum at 22.5A and 10V gate drive. With a gate charge (Qg) of 25 nC maximum at 10V, it is suitable for applications requiring efficient switching. Input capacitance (Ciss) is rated at 1640 pF maximum at 50V. The STI45N10F7 is housed in a TO-262 (I2PAK) package, allowing for through-hole mounting. This MOSFET is designed for high-power applications in industries such as industrial power supplies, automotive, and motor control. Its maximum power dissipation is 60W (Tc) and it operates over an extended temperature range of -55°C to 175°C (TJ). The maximum gate-source voltage (Vgs) is ±20V.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 50 V |
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