STI42N65M5
MOSFET N-CH 650V 33A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STI42N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This component is designed for high-voltage applications, featuring a Drain-to-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 33 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 79 mOhm maximum at 16.5 A and 10 V Vgs. Key parameters include a gate charge (Qg) of 100 nC maximum at 10 V and an input capacitance (Ciss) of 4650 pF maximum at 100 V. The MOSFET has a maximum power dissipation of 190 W (Tc) and a gate-source voltage (Vgs) limit of ±25 V. Packaged in an I2PAK (TO-262-3 Long Leads, TO-262AA) with through-hole mounting, this component is suitable for demanding applications across industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4650 pF @ 100 V |
Request a Quote
Clients Also Buy
STD18N55M5
MOSFET N-CH 550V 16A DPAK
STD18N65M5
MOSFET N-CH 650V 15A DPAK
STF45N65M5
MOSFET N-CH 650V 35A TO220FP
