STI40N65M2
MOSFET N-CH 650V 32A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics MDmesh™ M2 series N-channel Power MOSFET, part number STI40N65M2, is engineered for high-performance applications. This device offers a drain-source breakdown voltage (Vdss) of 650 V and a continuous drain current (Id) of 32 A at 25°C (Tc). The STI40N65M2 features a maximum on-resistance (Rds On) of 99 mOhm at 16 A and 10 V gate-source voltage. With a maximum power dissipation of 250 W (Tc) and an operating junction temperature of 150°C (TJ), it is suitable for demanding power conversion systems. Key parameters include a gate charge (Qg) of 56.5 nC at 10 V and input capacitance (Ciss) of 2355 pF at 100 V. The component is housed in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA) with through-hole mounting. This MOSFET is widely utilized in power factor correction (PFC) and switch-mode power supplies (SMPS).
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 56.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2355 pF @ 100 V |
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