STI400N4F6
MOSFET N-CH 40V 120A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI400N4F6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series, featuring a 40V drain-source voltage and 120A continuous drain current at 25°C (Tc). This device offers a low on-resistance of 1.7mOhm at 60A and 10V, with a maximum gate charge (Qg) of 377 nC at 10V and input capacitance (Ciss) of 20000 pF at 25V. It is rated for 300W (Tc) power dissipation and utilizes a TO-262-3 Long Leads, I2PAK package for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4.5V at 250µA. This component is suitable for applications in automotive and industrial power systems.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 377 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF @ 25 V |
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