STI360N4F6
MOSFET N-CH 40V 120A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI360N4F6 is an STripFET™ VI N-Channel power MOSFET featuring DeepGATE™ technology. This component offers a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) of 1.8mOhm is achieved at 60A and 10V gate-source voltage. With a gate charge (Qg) of 340nC at 10V, this MOSFET is designed for efficient switching applications. The STI360N4F6 is housed in a TO-262-3 Long Leads (I2PAK) package suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This device is qualified to AEC-Q101 standards, making it suitable for automotive applications.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17930 pF @ 25 V |
| Qualification | AEC-Q101 |
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