STI35N65M5
MOSFET N-CH 650V 27A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI35N65M5 is an N-Channel MDmesh™ V series power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 27A at 25°C (Tc). The STI35N65M5 offers low on-resistance (Rds On) of 98mOhm maximum at 13.5A and 10V Vgs, with a maximum power dissipation of 160W (Tc). Key parameters include a gate charge (Qg) of 83nC maximum at 10V Vgs and input capacitance (Ciss) of 3750pF maximum at 100V Vds. It is housed in a TO-262-3 Long Leads, I2PAK package for through-hole mounting and operates at junction temperatures up to 150°C. This component is suitable for use in power factor correction, switch mode power supplies, and industrial motor control applications.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 100 V |