STI34N65M5
MOSFET N-CH 650V 28A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics MDmesh™ V series STI34N65M5 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 650V. This device offers a continuous drain current of 28A (Tc) and a maximum power dissipation of 190W (Tc). The STI34N65M5 features a low on-resistance (Rds On) of 110mOhm at 14A and 10V, with a gate charge (Qg) of 62.5nC at 10V. It is housed in a TO-281 (I2PAKFP) through-hole package, suitable for applications requiring robust thermal performance. This MOSFET is designed for high-efficiency switching applications, commonly found in power supplies, server infrastructure, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 62.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 100 V |
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