STI33N60M6
MOSFET N-CH 600V 25A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI33N60M6 is an N-Channel Power MOSFET from the MDmesh™ M6 series, designed for demanding applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 25A at 25°C (Tc), with a maximum power dissipation of 190W (Tc). The STI33N60M6 offers a low on-resistance (Rds On) of 125mOhm at 12.5A and 10V (Vgs). Key characteristics include a gate charge (Qg) of 33.4 nC at 10V and input capacitance (Ciss) of 1515 pF at 100V (Vds). The device is housed in a TO-262 (I2PAK) package, suitable for through-hole mounting. This technology finds application in power factor correction (PFC) circuits, switch mode power supplies (SMPS), and general-purpose power switching across various industrial and consumer electronics sectors.
Additional Information
Series: MDmesh™ M6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1515 pF @ 100 V |
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