STI32N65M5
MOSFET N-CH 650V 24A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI32N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series, designed for high-efficiency power conversion applications. This device features a Drain-Source Voltage (Vdss) of 650V and a continuous Drain Current (Id) of 24A at a case temperature of 25°C. The STI32N65M5 offers a low on-resistance (Rds On) of 119mOhm maximum at 12A and 10V Vgs, contributing to reduced conduction losses. Its maximum power dissipation is rated at 150W at the case temperature. The MOSFET is packaged in an I2PAK (TO-262-3 Long Leads, I2PAK, TO-262AA) for through-hole mounting, facilitating robust thermal management. Key parameters include a gate charge (Qg) of 72 nC maximum at 10V and input capacitance (Ciss) of 3320 pF maximum at 100V. The operating junction temperature range extends to 150°C. This component is commonly utilized in power supplies, server applications, and renewable energy systems.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 119mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 100 V |
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