STI30NM60N
MOSFET N-CH 600V 25A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI30NM60N is an N-channel Power MOSFET from the MDmesh™ II series, designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 25A at 25°C (Tc). With a maximum power dissipation of 190W (Tc) and a low on-resistance (Rds On) of 130mOhm at 12.5A and 10V Vgs, it offers excellent conduction losses. The STI30NM60N is packaged in a TO-262-3 Long Leads (I2PAK) for through-hole mounting and operates efficiently up to a junction temperature of 150°C. Key parameters include a gate charge (Qg) of 91 nC at 10V and input capacitance (Ciss) of 2700 pF at 50V. This device is suitable for use in power factor correction, switch mode power supplies, and lighting applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 50 V |
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