STI30N65M5
MOSFET N-CH 650V 22A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI30N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This component features a 650 V drain-source voltage (Vdss) and a continuous drain current of 22 A at 25°C (Tc). The Rds On is specified at a maximum of 139 mOhm at 11 A and 10 V Vgs. With a maximum power dissipation of 140 W at 25°C (Tc), this device is designed for high-efficiency switching applications. It offers a gate charge (Qg) of 64 nC maximum at 10 V and an input capacitance (Ciss) of 2880 pF maximum at 100 V. The STI30N65M5 is housed in an I2PAK package with long leads, suitable for through-hole mounting. This MOSFET is utilized in industries such as industrial power supplies and renewable energy systems.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 139mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 100 V |
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