STI300N4F6
MOSFET N CH 40V 160A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI300N4F6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 160A at 25°C, with a maximum power dissipation of 300W (Tc). It offers low on-resistance (Rds On) of 2.2mOhm at 80A and 10V, and a gate charge (Qg) of 240 nC at 10V. The STI300N4F6 is housed in a TO-262-3 Long Leads, I2PAK (TO-262AA) package for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is typically utilized in power supply units, automotive applications, and industrial motor control systems.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 25 V |
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