STI270N4F3
MOSFET N-CH 40V 160A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI270N4F3 is an N-channel STripFET™ III Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 160A at 25°C case temperature. The device offers a low on-resistance of 2.6mOhm maximum at 80A and 10V gate drive. With a maximum power dissipation of 330W (Tc), it is suitable for high-power switching. The STI270N4F3 is AEC-Q101 qualified, making it ideal for automotive applications, as well as industrial power supplies and motor control systems. It is packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting. Key parameters include a gate charge of 150 nC at 10V and input capacitance of 7400 pF at 25V.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 25 V |
| Qualification | AEC-Q101 |
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