STI26NM60N
MOSFET N-CH 600V 20A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI26NM60N is an N-Channel Power MOSFET from the MDmesh™ II series, designed for high-efficiency switching applications. This device features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 140W (Tc). The STI26NM60N offers a low on-resistance (Rds On) of 165mOhm at 10A and 10V, contributing to reduced conduction losses. Key parameters include a gate charge (Qg) of 60nC at 10V and input capacitance (Ciss) of 1800pF at 50V. The component is housed in an I2PAK (TO-262-3 Long Leads, TO-262AA) package for through-hole mounting. This MOSFET is suitable for use in power factor correction (PFC), switch mode power supplies (SMPS), and lighting applications. The maximum junction temperature is 150°C, with a gate-source voltage (Vgs) tolerance of ±25V.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
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