STI25NM60ND
MOSFET N-CH 600V 21A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI25NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This device offers a continuous drain current of 21A at 25°C (Tc) and a maximum power dissipation of 160W (Tc). Key electrical parameters include a Drain-to-Source Voltage (Vdss) of 600V, a specified Rds(on) of 160mOhm at 10.5A and 10V, and a Gate Charge (Qg) of 80 nC at 10V. The input capacitance (Ciss) is 2400 pF at 50V, and the device supports a gate-source voltage (Vgs) range of ±25V with a threshold voltage (Vgs(th)) of 5V at 250µA. Packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting, this component is designed for demanding applications. It finds utility in power supply units, lighting, and industrial motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 50 V |
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