STI24NM65N
MOSFET N-CH 650V 19A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI24NM65N, an N-Channel Power MOSFET from the MDmesh™ II series, offers a 650V drain-source voltage and a continuous drain current of 19A at 25°C (Tc). This device features a low on-resistance of 190mOhm maximum at 9.5A, 10V, and a gate charge of 70 nC maximum at 10V. With a maximum power dissipation of 160W (Tc), it is designed for high-efficiency switching applications. The STI24NM65N is housed in an I2PAK (TO-262-3 Long Leads) package, suitable for through-hole mounting. Key parameters include an input capacitance (Ciss) of 2500 pF maximum at 50V and a gate-source voltage (Vgs) tolerance of ±25V. This component is utilized in industrial power supplies, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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