STI24N60M6
MOSFET N-CH 600V I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI24N60M6 is an N-Channel Power MOSFET from the MDmesh™ M6 series. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C (Tj). The low on-resistance is specified at 190mOhm maximum at 8.5A and 10V Vgs. With a maximum power dissipation of 130W (Tc), this component is designed for high-efficiency switching applications. Key parameters include a gate charge (Qg) of 23 nC at 10V Vgs and input capacitance (Ciss) of 960 pF at 100V Vds. The STI24N60M6 utilizes advanced STMicroelectronics trench technology for enhanced performance. It is supplied in an I2PAK (TO-262-3 Long Leads) package for through-hole mounting. This MOSFET is suitable for use in power factor correction (PFC), switch-mode power supplies (SMPS), and general-purpose high-voltage switching applications across various industrial sectors.
Additional Information
Series: MDmesh™ M6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tj) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 100 V |
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