STI23NM60ND
MOSFET N-CH 600V 19.5A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI23NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 19.5 A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 180 mOhm at 10 A and 10 V. With a gate charge (Qg) of 70 nC at 10 V and input capacitance (Ciss) of 2050 pF at 50 V, it is designed for efficient switching applications. The STI23NM60ND offers a maximum power dissipation of 150 W at 25°C (Tc) and operates at junction temperatures up to 150°C. It is housed in an I2PAK package (TO-262-3 Long Leads, TO-262AA) suitable for through-hole mounting. Applications for this MOSFET include power factor correction (PFC), switch-mode power supplies (SMPS), and general-purpose power switching in industrial and consumer electronics. The maximum gate-source voltage (Vgs) is ±25V, and the gate threshold voltage (Vgs(th)) is 5V at 250µA.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 50 V |
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