STI23NM60N
MOSFET N-CH 600V 19A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ II series N-Channel Power MOSFET, part number STI23NM60N. This device features a 600V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 19A at 25°C (Tc). The STI23NM60N has a maximum on-resistance (Rds On) of 180mOhm at 9.5A and 10V Vgs. With a high power dissipation capability of 150W (Tc), it is suitable for demanding applications. Key parameters include input capacitance (Ciss) of 2050pF (max) at 50V and gate charge (Qg) of 60nC (max) at 10V. This component utilizes advanced MOSFET technology and is provided in an I2PAK package with through-hole mounting. It finds application in power supply units, lighting, and motor control systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 50 V |
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